ISSN: 1003-6326
CN: 43-1239/TG
CODEN: TNMCEW

Vol. 17    No. 3    March 2007

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Copper nitride thin films prepared by
radio frequency magnetron sputtering
XIAO Jian-rong1, 2, XU Hui1, LIU Xiao-liang1,
LI Yan-feng1, ZHANG Peng-hua2, JIAN Xian-zhong3
(1. School of Physics Science and Technology, Central South University,Changsha 410083, China;
2. School of Material Science and Engineering, Central South University,Changsha 410083, China;
3. School of Electric and Engineering,University of Shanghai Science and Technology, ShangHai 200093, China
)
Abstract: Copper nitride (Cu3N) thin films were deposited by reactive radio frequency magnetron sputtering under different discharge powers and gas flow ratios. The structures of films were characterized by atomic force microscopy (AFM) and X-ray diffraction spectra (XRD). The properties of films were analyzed by UV-VIS spectra and four-probe method. The results show that the films’ growth prefers (111) direction at low nitrogen press and (100) direction at high nitrogen pressure. The optical band gap of the films ranges from 1.44 to 1.69 eV, the resistivity ranges from 60 to 5.6×105Ω∙m, and they both increase with the increase of nitrogen pressure.
Key words: copper nitride thin films; crystal structure; optical band gap; resistivity
Superintended by The China Association for Science and Technology (CAST)
Sponsored by The Nonferrous Metals Society of China (NFSOC)
Managed by Central South University (CSU)